PART |
Description |
Maker |
KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics Samsung Semiconductor Co., Ltd.
|
AS4C4M4F1Q-50TC AS4C4M4F1Q-60TC AS4C4M4F1Q-60JC |
DRAM|FAST PAGE|4MX4|CMOS|SOJ|28PIN|PLASTIC DRAM|FAST PAGE|4MX4|CMOS|TSOP|28PIN|PLASTIC 4M X 4 FAST PAGE DRAM, 60 ns, PDSO28
|
ALLIANCE SEMICONDUCTOR CORP
|
MB8116160A-70 |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16 位快速页面存取模式动态RAM) CMOS 1 M ?16 BIT Fast Page Mode DRAM(CMOS 1 M ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
MB8504D064AA-70 MB8504D064AA-60 |
CMOS 4M×64 BIT
Hyper Page Mode DRAM Module(CMOS 4M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
MB81116822A-84 MB81116822A-125 |
CMOS 2×1M ×8 BIT
Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
MB814100A-80 MB814100A-60 MB814100A-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
AS4C4M4F1 AS4C4M4F0 |
5V 4M×4 CMOS DRAM (Fast Page Mode)(5V 4M×4 CMOS 动态RAM(快速页面模式))
|
Alliance Semiconductor Corporation
|
V53C16125H V53C16125HK60 V53C16125HT50 |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM 128K x 16bit high performance fasr page mode CMOS dynamic RAM
|
Mosel Vitelic Corp Mosel Vitelic, Corp Mosel Vitelic Corp
|
K4F160411D K4F160412D K4F170411D K4F170412D K4F160 |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
AT28C64B-15SI AT28C64B DOC224 |
From old datasheet system 64K (8K x 8 CMOS 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
MB81V4265-70 |
CMOS 256K ×16BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|